Electrical characteristics of ion-beam synthesized Si nanocrystals in SiO 2 matrix

10th International Symposium on Integrated Circuits, Devices and Systems, ISIC-2004: Integrated Systems on Silicon - Proceedings

Volumn , Issue , 2004, Pages 281-283

  Ng, C Y ^a   Chen, T P ^a   Tse, M S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ION-BEAM SYNTHESIS; LOW-FIELD LEAKAGE CURRENTS; NANOCRYSTALS; TUNNELING PATHS;

CAPACITANCE; CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SYNTHESIS (CHEMICAL);

NANOSTRUCTURED MATERIALS;

EID: 13644252355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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