-
1
-
-
0001595119
-
Time-resolved optical characterization of electrical activity in integrated circuits
-
J. C. Tsang, J. A. Kash, and D. P. Vallett, "Time-resolved optical characterization of electrical activity in integrated circuits," Proceedings of the IEEE, vol. 88, pp. 1440-1459, 2000.
-
(2000)
Proceedings of the IEEE
, vol.88
, pp. 1440-1459
-
-
Tsang, J.C.1
Kash, J.A.2
Vallett, D.P.3
-
2
-
-
0344897641
-
Time-resolved photon counting system based on a geiger-mode InGaAs/InP APD and a solid immersion lens
-
Tucson, Arizona
-
J. S. Vickers, R. Ispasoiu, D. Cotton, et al., "Time-Resolved Photon Counting System based on a Geiger-Mode InGaAs/InP APD and a Solid Immersion Lens," presented at IEEE Lasers and Electro-Optics Society Annual Meeting, Tucson, Arizona, 2003, pp. 600-601.
-
(2003)
IEEE Lasers and Electro-Optics Society Annual Meeting
, pp. 600-601
-
-
Vickers, J.S.1
Ispasoiu, R.2
Cotton, D.3
-
3
-
-
0031476079
-
Hot luminescence from CMOS circuits: A picosecond probe of internal timing
-
J. A. Kash and J. C. Tsang, "Hot Luminescence from CMOS Circuits: A Picosecond Probe of Internal Timing," Phys. Stat. Sol. (b), vol. 204, pp. 507-516, 1997.
-
(1997)
Phys. Stat. Sol. (B)
, vol.204
, pp. 507-516
-
-
Kash, J.A.1
Tsang, J.C.2
-
4
-
-
0344091931
-
Prospects of time-resolved photon emission as a debug tool
-
Phoenix, AZ
-
J. Vickers, N. Pakdaman, and S. Kasapi, "Prospects of Time-Resolved Photon Emission as a Debug Tool," presented at 28th International Symposium on Testing and Failure Analysis, Phoenix, AZ, 2002, pp. 609-616.
-
(2002)
28th International Symposium on Testing and Failure Analysis
, pp. 609-616
-
-
Vickers, J.1
Pakdaman, N.2
Kasapi, S.3
-
5
-
-
0032305911
-
Diagnosis and characterization of timing-related defects by time-dependent light emission
-
International
-
D. Knebel, P. Sanda, M. McManus, et al., "Diagnosis and characterization of timing-related defects by time-dependent light emission," presented at Test Conference, 1998. Proceedings. International, 1998, pp. 733-739.
-
(1998)
Test Conference, 1998. Proceedings
, pp. 733-739
-
-
Knebel, D.1
Sanda, P.2
McManus, M.3
-
6
-
-
1542300263
-
Defect localization using time-resolved photon emission on SOI devices that fail scan tests
-
D. Bodoh, E. Black, K. Dickson, et al., "Defect Localization Using Time-Resolved Photon Emission on SOI Devices that Fail Scan Tests," presented at 28th International Symposium on Testing and Failure Analysis, 2002, pp. 655-662.
-
(2002)
28th International Symposium on Testing and Failure Analysis
, pp. 655-662
-
-
Bodoh, D.1
Black, E.2
Dickson, K.3
-
7
-
-
0033347827
-
Tools for non-invasive optical characterization of CMOS circuits
-
Electron Devices Meeting, 1999. International
-
F. Stellari, F. Zappa, S. Cova, et al., "Tools for non-invasive optical characterization of CMOS circuits," presented at Electron Devices Meeting, 1999. IEDM Technical Digest. International, 1999, pp. 487-490.
-
(1999)
IEDM Technical Digest.
, pp. 487-490
-
-
Stellari, F.1
Zappa, F.2
Cova, S.3
-
8
-
-
4444281073
-
Hot-carrier luminescence: Comparison of different CMOS technologies
-
A. Tosi, F. Stellari, F. Zappa, et al., "Hot-carrier luminescence: comparison of different CMOS technologies," presented at European Solid-State Device Research, 2003. ESSDERC'03. 33rd Conference on, 2003, pp. 351-354.
-
(2003)
European Solid-State Device Research, 2003. ESSDERC'03. 33rd Conference on
, pp. 351-354
-
-
Tosi, A.1
Stellari, F.2
Zappa, F.3
-
9
-
-
0742268996
-
CMOS circuit testing via time-resolved luminescence measurements and simulations
-
F. Stellari, A. Tosi, F. Zappa, et al., "CMOS Circuit Testing via Time-Resolved Luminescence Measurements and Simulations," IEEE Transactions on Instrumentation and Measurement, vol. 53, pp. 163-169, 2004.
-
(2004)
IEEE Transactions on Instrumentation and Measurement
, vol.53
, pp. 163-169
-
-
Stellari, F.1
Tosi, A.2
Zappa, F.3
-
10
-
-
19944408359
-
Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs
-
M. Gurfinkel, M. Borenshtein, A. Margulis, et al., "Study of Hot-Carrier-Induced Photon Emission from 90 nm Si MOSFETs," Applied Surface Science, vol. 248, pp. 62-65, 2005.
-
(2005)
Applied Surface Science
, vol.248
, pp. 62-65
-
-
Gurfinkel, M.1
Borenshtein, M.2
Margulis, A.3
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