SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 248, Issue 1-4, 2005, Pages 62-65

Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs

(7) Gurfinkel, M a Borenshtein, M b Margulis, A b Sade, S b Fefer, Y b Weizman, Y b Shapira, Yoram a

a TEL AVIV UNIVERSITY (Israel)

b FREESCALE SEMICONDUCTOR INC (United States)

Author keywords

Hot carrier luminescence; MOSFET; Photon emission; Semiconductor device models; Substrate current

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON TRANSITIONS; LUMINESCENCE; MICROSCOPIC EXAMINATION; MOSFET DEVICES; PHOTOEMISSION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICON; SUBSTRATES; THERMAL EFFECTS; TRANSISTORS;

HOT CARRIER LUMINESCENCE; NIR MICROSCOPY; PHOTON EMISSION; SUBSTRATE CURRENT;

PHOTONS;

EID: 19944408359 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2005.03.033 Document Type: Conference Paper

Times cited : (13)

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