Growth of low-dislocation-density Al N under Ga irradiation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 A, 2006, Pages 2422-2425

  Nakajima, Akira ^a,b   Furukawa, Yuzo ^a   Yokoya, Hironobu ^a   Yamaguchi, Sayuri ^a   Yonezu, Hiroo ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

AIN; AlGaN; Deep UV; Dislocation; GaN; MBE; Optical property; SiC

Indexed keywords

ALUMINUM NITRIDE; DIFFRACTION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; IRRADIATION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; ULTRAVIOLET DEVICES;

ALGAN; DEEP-UV;

GALLIUM;

EID: 33645666487     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2422     Document Type: Article

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