The size dependence of the optical and electrical properties of Ge quantum dots deposited by pulsed laser deposition

Semiconductor Science and Technology

Volumn 21, Issue 5, 2006, Pages 713-716

  Ma, Xiying ^a   Shi, Weilin ^a   Li, Baojun ^b  

^a SHAOXING COLLEGE OF ARTS AND SCIENCES   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GERMANIUM COMPOUNDS; INFRARED DETECTORS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; PHOTOCURRENTS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION;

PEAKS SHIFT; PHOTOLUMINESCENCE EMISSION; QUANTUM CONFINEMENT EFFECTS; TEMPERATURE COEFFICIENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645660216     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/5/026     Document Type: Article

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