Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl 3 gas

Applied Surface Science

Volumn 230, Issue 1-4, 2004, Pages 44-49

  Shi, Wei Lin ^a   Ma, Xiying ^a,b  

^a LANZHOU UNIVERSITY   (China)

^b SHAOXING COLLEGE OF ARTS AND SCIENCES   (China)

Author keywords

Excimer pulsed laser; Ohmic contact; Positive hole doping; Vapor doping

Indexed keywords

BORON COMPOUNDS; ELECTRIC CONDUCTIVITY; EXCIMER LASERS; IMPURITIES; ION IMPLANTATION; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; THIN FILMS;

OHMIC CONTACT; POSITIVE HOLE DOPING; SHEET LASERS; VAPOR DOPING;

SILICON;

EID: 2542494389     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.11.056     Document Type: Article

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