Thermal coefficients of the electrical resistivity of Ge nanocrystals on Si for infrared detectors

Optics Communications

Volumn 238, Issue 4-6, 2004, Pages 301-305

  Ma, Xiying ^a   Shi, Weilin ^b  

^a SHAOXING COLLEGE OF ARTS AND SCIENCES   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

Ge nanocrystals; Pulsed laser deposition; Resistance temperature coefficients

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CRYSTALS; ELECTRIC CONDUCTIVITY; EXCIMER LASERS; INFRARED DETECTORS; LASER PULSES; QUANTUM THEORY; THERMAL EFFECTS; THIN FILMS;

HOMOJUNCTIONS; RESPONSIVITY; THERMAL INFRARED DETECTORS (TIRD);

NANOSTRUCTURED MATERIALS;

EID: 3342967776     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2004.05.004     Document Type: Article

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