Electrical properties of aluminum silicate films grown by plasma enhanced atomic layer deposition

Electrochemical and Solid-State Letters

Volumn 9, Issue 1, 2006, Pages

  Lim, Jung Wook ^a   Yun, Sun Jin ^a   Lee, Jin Ho ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CAPACITANCE; CRYSTALLIZATION; DEPOSITION; FILM GROWTH; PERMITTIVITY;

ATOMIC LAYER DEPOSITION; FILM CRYSTALLIZATION; FLEXIBLE DEVICES; HYSTERESIS VOLTAGE;

DIELECTRIC FILMS;

EID: 33645533317     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2136249     Document Type: Article

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