Electrical conduction transition and largely reduced leakage current in aluminum-doped barium strontium titanate thin films heteroepitaxially grown on IrMgOSi (100)

Applied Physics Letters

Volumn 86, Issue 13, 2005, Pages 1-3

  Chen, T L ^a,c   Li, X M ^a   Wu, W B ^b   Yu, W D ^a   Gao, X D ^a   Zhang, X ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b SHANGHAI UNIVERSITY   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BARIUM COMPOUNDS; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; EPITAXIAL GROWTH; IRIDIUM; LEAKAGE CURRENTS; MAGNESIA; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL CONDUCTION TRANSITION; FIELD-ENHANCED SCHOTTKY EMISSION; LEAKAGE CURRENT DENSITY; SILICON SUBSTRATES;

THIN FILMS;

EID: 17644384363     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1896448     Document Type: Article

References (15)

1. D. E. Kotecki, Integr. Ferroelectr. 16, 1 (1997).
2. J. Im, O. Auciello, P. K. Baumann, S. K. Streiffer, D. K. Kaufman, and A. R. Krauss, Appl. Phys. Lett. 76, 625 (2000).
3. K. Tao, Z. Hao, B. Xu, B. Chen, J. Miao, H. Yang, and B. R. Zhao, J. Appl. Phys. 94, 4042 (2003).
4. G. W. Dietz, M. Schumacher, R. Waser, S. K. Streiffer, C. Basceri, and A. I. Kingon, J. Appl. Phys. 82, 2359 (1997).
5. C. J. Peng and S. B. Krupanidhi, J. Mater. Res. 10, 708 (1995).
6. H. Y. Hsu, J. D. Luttmer, R. Tsu, S. Summerfelt, M. Bedekar, T. Tokumoto, and J. Nulman, Appl. Phys. Lett. 66, 2975 (1995).
7. S. Zafar, R. E. Jones, B. Jiang, B. White, V. Kaushik, and S. Gillespie, Appl. Phys. Lett. 73, 3533 (1998).
8. S. T. Chang and J. Y. Lee, Appl. Phys. Lett. 80, 655 (2002).
9. G. R. Fox and S. B. Krupanidhi, J. Appl. Phys. 74, 1949 (1993).
10. S. Y. Wang, B. L. Cheng, C. Wang, S. Y. Dai, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.1755421 84, 4116 (2004); S. S. Kim and C. Park, Appl. Phys. Lett. 0003-6951 10.1063/1.125075 75, 2554 (1999); M. Copel, P. R. Duncombe, D. A. Neumayer, T. M. Shaw, and R. M. Tromp, Appl. Phys. Lett. 70, 3227 (1997).
11. S. Y. Wang, B. L. Cheng, C. Wang, S. Y. Dai, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.1755421 84, 4116 (2004); S. S. Kim and C. Park, Appl. Phys. Lett. 0003-6951 10.1063/1.125075 75, 2554 (1999); M. Copel, P. R. Duncombe, D. A. Neumayer, T. M. Shaw, and R. M. Tromp, Appl. Phys. Lett. 70, 3227 (1997).
12. S. Y. Wang, B. L. Cheng, C. Wang, S. Y. Dai, H. B. Lu, Y. L. Zhou, Z. H. Chen, and G. Z. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.1755421 84, 4116 (2004); S. S. Kim and C. Park, Appl. Phys. Lett. 0003-6951 10.1063/1.125075 75, 2554 (1999); M. Copel, P. R. Duncombe, D. A. Neumayer, T. M. Shaw, and R. M. Tromp, Appl. Phys. Lett. 70, 3227 (1997).
13. T. Chen, X. M. Li, and X. Zhang, J. Cryst. Growth 267, 80 (2004).
14. S. M. Sze, Physics of Semiconductor Device, 2nd ed. (Wiley, New York, 1981).
15. P. Li and T. M. Lu, Phys. Rev. B 43, 14261 (1991).