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Volumn 43, Issue 4 B, 2004, Pages
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2.43 μm Light emission of InGaAsSbN quantum well diodes grown on InP substrates
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Author keywords
Electroluminescence; InGaAsSbN; InP; MBE
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Indexed keywords
ELECTROLUMINESCENCE;
ENERGY GAP;
LIGHT EMISSION;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR DIODES;
SUBSTRATES;
THERMAL EFFECTS;
ACTIVE LAYERS;
CLADDING LAYERS;
WAVELENGTHS;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 3042792712
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.43.l530 Document Type: Article |
Times cited : (5)
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References (14)
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