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Volumn 43, Issue 4 B, 2004, Pages

2.43 μm Light emission of InGaAsSbN quantum well diodes grown on InP substrates

Author keywords

Electroluminescence; InGaAsSbN; InP; MBE

Indexed keywords

ELECTROLUMINESCENCE; ENERGY GAP; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; SUBSTRATES; THERMAL EFFECTS;

EID: 3042792712     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l530     Document Type: Article
Times cited : (5)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.