Low Noise and Low Distortion Performances of an AlGaN/GaN HFET

IEICE Transactions on Electronics

Volumn E86-C, Issue 10, 2003, Pages 2058-2064

  Hirose, Yutaka ^a   Ikeda, Yoshito ^a   Ishii, Motonori ^a   Murata, Tomohiro ^a   Inoue, Kaoru ^a   Tanaka, Tsuyoshi ^a   Ishikawa, Hiroyasu ^b   Egawa, Takashi ^b   Jimbo, Takashi ^b  

^a PANASONIC CORPORATION   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlGaN GaN HFET; Intermodulation distortion; Low noise amplifier; Noise figure (NF)

Indexed keywords

ELECTRIC DISTORTION; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MOBILE TELECOMMUNICATION SYSTEMS; SILICON CARBIDE;

LOW NOISE AMPLIFIERS;

HETEROJUNCTIONS;

EID: 0242580165     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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