AlGaN/GaN HEMTs on SiC: Towards Power Operation at V-Band

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 567-570

  Quay, R ^a   Tessmann, A ^a   Kiefer, R ^a   Weber, R ^a   Van Raay, F ^a   Kuri, M ^a   Riessle, M ^a   Massler, H ^a   Muller S ^a   Schlechtweg, M ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON BEAM LITHOGRAPHY; GALLIUM COMPOUNDS; MILLIMETER WAVES; OPTIMIZATION; SILICON CARBIDE; SOLID STATE DEVICES; TRANSCONDUCTANCE; TRANSISTORS; WAVEGUIDES;

PASSIVE LOAD-PULL MEASUREMENTS; POWER DENSITY; ROBUST OUTPUT POWER GENERATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17644441989     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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