Short channel Schottky barrier TFTS with metal gate and high dielectric constant gate dielectric

Proceedings - Electrochemical Society

Volumn PV 2005-05, Issue , 2005, Pages 376-382

  Huang, Chih Feng ^a   Tsui, Hing Yue ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); PERMITTIVITY; THRESHOLD VOLTAGE;

HIGH-K DIELECTRIC; SHORT CHANNEL SCHOTTKY BARRIER (SB);

SCHOTTKY BARRIER DIODES;

EID: 31844445144     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Y. Uchida, M. Matsumura, IEEE Trans. Electron Devices, 36, (1989) 2940.
2. C.-D. Kim, M. Matsumura, IEEE Trans. Electron Devices, 43, (1996) 2172.
3. J.-W. Lee, N.-I. Lee, S.-H. Hur, C.-H. Han, IEDM Tech. Dig., (1997) 519.
4. A. G. Lewis, T. Y. Huang, I.-W. Wu, R. H. Bruce, A. Chiang, IEDM Tech. Dig., (1989) 349.
5. H. Wang, M. Chan, S. Jagar, Y. wang, P. K. Ko, IEEE Electron Device Lett., 21, (2000) 439.
6. K. I. Kamins, P. J. Marcoux, IEEE Electron Device Lett., 1, (1980) 159.
7. P.-S. Lin, T. S. Li, IEEE Electron Device Lett., 15, (1994) 138.
8. J. Kedzierski, P. Xuan, V. Subramanian, J. Bokor, T.-J. King, C. Hu, Superlattices and Microstructures, 28, (2000) 445.
9. B. Y. Tsui, C.-P. Lin, IEEE Electron Device Lett., 25, (2004) 430.
10. J. R. Tucker, C. Wang, P.S. Carney, Appl. Phys. Lett., 65, (1994) 618.
11. W. Saitoh, A. Itoh, S. Yamagami, M. Asada, Jpn. J. Appl. Phys. 38,(1999) 6226.