Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 520-522

  Kusakabe, K ^a   Furuzuki, T ^a   Ohkawa, K ^a,b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Electrical property; GaN; MOVPE

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MOBILITY; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SILICON; THERMAL EFFECTS;

ELECTRICAL PROPERTY; SI-DONORS; SI-DOPED GAN;

GALLIUM NITRIDE;

EID: 33645222778     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.132     Document Type: Conference Paper

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