GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 931-935

  Hirako, A ^a   Yoshitani, M ^a   Nishibayashi, M ^a   Nishikawa, Y ^b   Ohkawa, K ^a,b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Computre simulation; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COMPUTATIONAL METHODS; ELECTRON MOBILITY; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SUBSTRATES; THERMODYNAMICS;

COMPUTATIONAL ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036531089     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01999-6     Document Type: Article

References (13)