Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 2, 2001, Pages 621-624

  Ohkawa, K ^a,b   Hirako, A ^a   Yoshitani, M ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141760772     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200112)188:2<621::AID-PSSA621>3.0.CO;2-V     Document Type: Article

References (5)

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4. A. HIRAKO, M. YOSHITANI, M. NISHIBAYASHI, Y. NISHIKAWA, and K. OHKAWA, in: Abstracts 13th Internat. Conf. Crystal Growth, Kyoto July 30-August 4, 2001, submitted to J. Cryst. Growth.
5. N. G. WEIMANN, L. F. EASTMAN, D. DOPPALAPUDI, H. M. NG, and T. D. MOUSTAKAS, J. Appl. Phys. 83, 3656 (1998).