Pattern etching of Ta X-ray mask absorber on SiC membrane by inductively coupled plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 7 PART A, 1998, Pages

  Iba, Yoshihisa ^a   Kumasaka, Fumiaki ^a   Aoyama, Hajime ^a   Taguchi, Takao ^a   Yamabe, Masaki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

CrN; Etching; ICP; Membrane; SiC; Ta; X ray lithography; X ray mask

Indexed keywords

CHLORINE; CHROMIUM COMPOUNDS; ELECTRIC POTENTIAL; HELIUM; MEMBRANES; OXYGEN; PHOTORESISTS; PLASMA ETCHING; SILICON CARBIDE; TANTALUM; X RAY LITHOGRAPHY;

CHROMIUM NITRIDE; INDUCTIVELY COUPLED PLASMAS; X RAY MASKS;

MASKS;

EID: 0032119928     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l824     Document Type: Article

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