Electron cyclotron resonance plasma etching of α-Ta for X-ray mask absorber using chlorine and fluoride gas mixture

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 6914-6918

  Tsuchizawa, Tai ^a   Iriguchi, Hiroki ^b   Takahashi, Chiharu ^a   Shimada, Masaru ^a   Uchiyama, Shingo ^a   Oda, Masatoshi ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advanced Technology Corporation   (Japan)

Author keywords

Chlorine; ECR; Fluoride gas; Plasma etching; X ray mask; Ta

Indexed keywords

CHLORINE; ELECTRON CYCLOTRON RESONANCE; FLUORINE COMPOUNDS; MASKS; MIXTURES; PLASMA ETCHING; SPUTTERING;

CRITICAL DIMENSIONS (CD); ION STREAMS;

X RAY LITHOGRAPHY;

EID: 0034429487     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6914     Document Type: Article

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