Etching mechanism of Y2O3thin films in high density Cl2/Ar plasma

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2676-2679

  Kim, Y C ^a   Kim, C I ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; PLASMA ETCHING; SECONDARY ION MASS SPECTROMETRY; SURFACE REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM COMPOUNDS;

ETCH RATE;

THIN FILMS;

EID: 0035443217     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1399316     Document Type: Article

References (6)