Dry etch processes for the fabrication of EUV masks

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 282-288

  Letzkus, F ^a   Butschke, J ^a   Irmscher, M ^a   Kamm, F M ^b   Koepernik, C ^a   Mathuni, J ^b   Rau, J ^b   Ruhl, G ^b  

^a Institut fur Mikroelektronik Stuttgart   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Absorber etching; Buffer etching; Cr; EUV Mask; TaN

Indexed keywords

CHROMIUM; DRY ETCHING; MASKS; MULTILAYERS; QUARTZ; SUBSTRATES; TANTALUM COMPOUNDS; ULTRAVIOLET RADIATION;

ABSORBER ETCHING; BUFFER ETCHING; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

LITHOGRAPHY;

EID: 17344393754     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00112-1     Document Type: Conference Paper

References (5)

1. A. Yen, Photomask Japan 2003, Yokohama, Japan, April 16-18, 2003.
2. Mangat P., Hector S. Proc. SPIE. 4409:2001.
3. M. Irmscher, D, Beyer, J. Butschke, C. Constantine, T. Hoffmann, C. Koepernik, C. Krauss, B. Leibold, F. Letzkus, D. Mueller, R. Springer, P. Voehringer, Photomask Japan 2002, Yokohama, Japan, April 23-25, 2002.
4. D. Beyer, D. Loeffelmacher, G. Goedl, P. Hudek, B. Schnabel, T. Elster, BACUS Conference, Monterey, CA, USA October 2-5, 2001.
5. L. Dieu, G. Hughes, D. Mellenthin, E. Fanuchi, B. Lafontaine, H. Levinson, S. Hector, P. Mangat, E. DelaRosa, in: Oral Presentation at the 1st International EUV Lithography Symposium Dallas, Texas, USA, October 15-17, 2002.