Development of a plasma etch process for TaN absorber patterning on EUV masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 1014-1025

  Ruhl, Guenther ^a   Mathuni, Josef ^a   Knobloch, Dirk ^a   Kamm, Frank Michael ^a   Rau, Jenspeter ^a   Letzkus, Florian ^b   Springer, Reinhard ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Institut fur Mikroelektronik Stuttgart   (Germany)

Author keywords

Endpoint detection; EUV masks; Plasma etching; TaN

Indexed keywords

CHROMIUM; LITHOGRAPHY; MULTILAYERS; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; TANTALUM COMPOUNDS;

ENDPOINT DETECTION; EXTREME ULTRAVIOLET (EUV) MASKS;

MASKS;

EID: 1642474029     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504243     Document Type: Conference Paper

References (3)

1. P.-Y. Van, A. Ma, Y.-C- Huang, B. Stoehr, J. Valdivia, "EUVL square mask patterning with TaN absorber", SPIE Proc. 4889 (2002) 431.
2. G. Zhang, P.-Y. Yan, "Cr and TaN absorber mask etch CD performance study for EUVL", SPIE Proc. 4889 (2002) 1092.
3. th European AEC/APC Conference Proc. (2003), to be published.