A top-gate carbon-nanotube field-effect transistor with a titanium-dioxide insulator

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 A, 2002, Pages

  Nihey, Fumiyuki ^a   Hongo, Hiroo ^a   Yudasaka, Masako ^a   Iijima, Sumio ^a,b  

^a NEC CORPORATION   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Field effect transistor; Gate insulator; Single wall carbon nanotube; Titanium dioxide; Top gate structure

Indexed keywords

CARBON NANOTUBES; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; PERMITTIVITY; SEMICONDUCTING SILICON; SILICA; TITANIUM DIOXIDE; TRANSCONDUCTANCE;

SINGLE-WALL CARBON NANOTUBES (SWNT);

FIELD EFFECT TRANSISTORS;

EID: 0036815036     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1049     Document Type: Article

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