Determination of band gap in polycrystalline Si/Ge thin film multilayers

Journal of Materials Research

Volumn 21, Issue 3, 2006, Pages 623-631

  Tripathi, Shilpa ^a   Brajpuriya, R ^a   Mukharjee, C ^b   Chaudhari, S M ^a  

^a University Grant Commission   (India)

^b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; LIGHT MEASUREMENT; MULTILAYERS; PHOTOEMISSION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING GERMANIUM; ULTRAVIOLET SPECTROSCOPY;

BAND GAP; OPTICAL ABSORPTION MEASUREMENTS; PHOTOEMISSION MEASUREMENTS; THIN FILM MULTILAYERS; VALENCE BAND;

THIN FILMS;

EID: 33645129043     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0096     Document Type: Article

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