Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

Thin Solid Films

Volumn 358, Issue 1, 2000, Pages 56-61

  Olivares, J ^a   Martin P ^b   Rodriguez A ^a   Sangrador, J ^a   Jimenez J ^b   Rodriguez T ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSIDAD DE VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; THIN FILM TRANSISTORS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SOLID-PHASE CRYSTALLIZATION;

AMORPHOUS FILMS;

EID: 0033908401     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00711-7     Document Type: Article

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