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Volumn 23, Issue 4, 2005, Pages 1141-1145

Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; HETEROJUNCTIONS; MOS DEVICES; SILICON CARBIDE; SUBSTRATES; SURFACE ROUGHNESS; TRANSISTORS;

BUFFER LAYERS; DISLOCATION DENSITY; MISFIT DISLOCATION ARRAYS;

FILM GROWTH;

EID: 31044433060 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1913679 Document Type: Conference Paper

Times cited : (3)

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