Growth of GaN on Si(100) substrates using BP as a buffer layer - Selective epitaxial growth

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 135-138

  Nishimura, Suzuka ^a   Hanamoto, Hidetoshi ^a   Terashima, Kazutaka ^b   Matsumoto, Satoru ^a  

^a KEIO UNIVERSITY   (Japan)

^b SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Boron monophosphide; Cubic GaN; MOCVD; Si substrate

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES; SURFACE CHEMISTRY; VAPOR PHASE EPITAXY;

BUFFER LAYERS; MASK MATERIALS;

GALLIUM NITRIDE;

EID: 0037198520     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00013-2     Document Type: Conference Paper

References (7)