Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2187-2190

  Joblot, S ^a,b   Semond, F ^a   Natali, F ^a   Vennegues P ^a   Laugt M ^a   Cordier, Y ^a   Massies, J ^a  

^a CRHEA CNRS   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTALLINE MATERIALS; ETCHING; MOLECULAR BEAM EPITAXY; NUCLEATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; WURTZITE PHASE; WURTZITE-GAN LAYERS;

GALLIUM NITRIDE;

EID: 27344457875     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461569     Document Type: Conference Paper

References (7)

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