-
1
-
-
1142304524
-
Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping
-
D.H. Macdonald, L.J. Geerlings, and A. Azzizi: Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping. J. Appl. Phys. 95, 1021 (2004).
-
(2004)
J. Appl. Phys.
, vol.95
, pp. 1021
-
-
Macdonald, D.H.1
Geerlings, L.J.2
Azzizi, A.3
-
2
-
-
0015973475
-
Investigation of photon and thermal induced changes in silicon solar cells
-
(IEEE, New York)
-
H. Fischer and W. Pschunder: Investigation of photon and thermal induced changes in silicon solar cells. In Proc. 10th IEEE Photovolt. Spec. Conf. (IEEE, New York, 1973), p. 404.
-
(1973)
Proc. 10th IEEE Photovolt. Spec. Conf.
, pp. 404
-
-
Fischer, H.1
Pschunder, W.2
-
3
-
-
0031370370
-
Investigation of carrier lifetime instabilities in Cz-grown silicon
-
(IEEE, New York)
-
J. Schmidt, A.G. Aberle, and R. Hezel: Investigation of carrier lifetime instabilities in Cz-grown silicon. In Proc. 26th IEEE Photovolt. Spec. Conf. (IEEE, New York, 1997), p. 13.
-
(1997)
Proc. 26th IEEE Photovolt. Spec. Conf.
, pp. 13
-
-
Schmidt, J.1
Aberle, A.G.2
Hezel, R.3
-
4
-
-
0002357721
-
On the degradation of Cz-Silicon solar cells
-
(EC, Ispra, Italy)
-
S.W. Glunz, S. Rein, W. Warta, J. Knobloch, and W. Wettling: On the degradation of Cz-Silicon solar cells, in Proc. 2nd World Conf. Photovolt. Solar Energy Conv. (EC, Ispra, Italy 1998), p. 1343.
-
(1998)
Proc. 2nd World Conf. Photovolt. Solar Energy Conv.
, pp. 1343
-
-
Glunz, S.W.1
Rein, S.2
Warta, W.3
Knobloch, J.4
Wettling, W.5
-
5
-
-
0042926667
-
Recombination-enhanced formation of the metastable boron-oxygen complex in crystalline silicon
-
K. Bothe, R. Hezel, and J, Schmidt: Recombination-enhanced formation of the metastable boron-oxygen complex in crystalline silicon. Appl. Phys. Lett. 83, 1125 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 1125
-
-
Bothe, K.1
Hezel, R.2
Schmidt, J.3
-
7
-
-
21544463903
-
Electronically controlled reactions of interstitial iron in silicon
-
L.C. Kimerling and J.L. Benton: Electronically controlled reactions of interstitial iron in silicon. Physica B 116, 297 (1983).
-
(1983)
Physica B
, vol.116
, pp. 297
-
-
Kimerling, L.C.1
Benton, J.L.2
-
8
-
-
0034228219
-
Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes
-
D. Macdonald and A. Cuevas: Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes. Prog. Photovolt. 8, 363 (2000).
-
(2000)
Prog. Photovolt.
, vol.8
, pp. 363
-
-
Macdonald, D.1
Cuevas, A.2
-
9
-
-
20444413455
-
Effect of dissociation of iron-boron pairs in crystalline silicon on solar cell properties
-
J. Schmidt: Effect of dissociation of iron-boron pairs in crystalline silicon on solar cell properties. Prog. Photovolt. 13, 325 (2005).
-
(2005)
Prog. Photovolt.
, vol.13
, pp. 325
-
-
Schmidt, J.1
-
10
-
-
0001612762
-
Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon
-
J. Schmidt and A. Cuevas: Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon. J. Appl. Phys. 86, 3175 (1999).
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 3175
-
-
Schmidt, J.1
Cuevas, A.2
-
11
-
-
0001649399
-
Interstitial defect reactions in silicon
-
L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, and C.E. Caefer: Interstitial defect reactions in silicon. Mater. Sci. Forum 38-41, 141 (1989).
-
(1989)
Mater. Sci. Forum
, vol.38-41
, pp. 141
-
-
Kimerling, L.C.1
Asom, M.T.2
Benton, J.L.3
Drevinsky, P.J.4
Caefer, C.E.5
-
12
-
-
0037450271
-
Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
-
S. Rein and S. Glunz: Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy. Appl. Phys. Lett. 82, 1054 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 1054
-
-
Rein, S.1
Glunz, S.2
-
13
-
-
1642479264
-
Understanding and reducing the boron-oxygen-related performance degradation in Czochralski silicon solar cells
-
K. Bothe, R. Hezel, and J. Schmidt: Understanding and reducing the boron-oxygen-related performance degradation in Czochralski silicon solar cells. Solid State Phenomena 95-96, 223 (2004).
-
(2004)
Solid State Phenomena
, vol.95-96
, pp. 223
-
-
Bothe, K.1
Hezel, R.2
Schmidt, J.3
-
14
-
-
0013043611
-
Electrical and thermal properties of the metastable defect in borondoped Czochralski silicon
-
(WIP-ETA, Munich, Germany)
-
S. Rein, T. Rehrl, W. Warta, S.W. Glunz, and G. Willeke: Electrical and thermal properties of the metastable defect in borondoped Czochralski silicon, in Proc. 17th European Photovolt. Solar Energy Conf. (WIP-ETA, Munich, Germany, 2001), p. 1555.
-
(2001)
Proc. 17th European Photovolt. Solar Energy Conf.
, pp. 1555
-
-
Rein, S.1
Rehrl, T.2
Warta, W.3
Glunz, S.W.4
Willeke, G.5
-
15
-
-
1442337113
-
Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon
-
J. Schmidt and K. Bothe: Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon. Phys. Rev. B 69, 024107 (2004).
-
(2004)
Phys. Rev. B
, vol.69
, pp. 024107
-
-
Schmidt, J.1
Bothe, K.2
-
16
-
-
6344257151
-
Metastable defect in Cz-Si: Electrical properties and quantitative correlation with different impurities
-
S. Rein, S.W. Glunz, and G. Willeke: Metastable defect in Cz-Si: Electrical properties and quantitative correlation with different impurities, in Proc. 3rd World Conf. Photovolt. Solar Energy Conv. (2003), p. 2899.
-
(2003)
Proc. 3rd World Conf. Photovolt. Solar Energy Conv.
, pp. 2899
-
-
Rein, S.1
Glunz, S.W.2
Willeke, G.3
-
17
-
-
0036953923
-
Formation and annihilation of the metastable defect in boron-doped Czochralski silicon
-
(IEEE, New York)
-
J. Schmidt, K. Bothe, and R. Hezel: Formation and annihilation of the metastable defect in boron-doped Czochralski silicon, in Proc. 29th IEEE Photovolt. Spec. Conf. (IEEE, New York, 2002), p. 178.
-
(2002)
Proc. 29th IEEE Photovolt. Spec. Conf.
, pp. 178
-
-
Schmidt, J.1
Bothe, K.2
Hezel, R.3
-
18
-
-
0345383225
-
Experimental evidence of the oxygen dimer in silicon
-
L.I. Murin, T. Hallberg, V.P. Markevich, and J.L. Lindström: Experimental evidence of the oxygen dimer in silicon. Phys. Rev. Lett. 80, 93 (1998).
-
(1998)
Phys. Rev. Lett.
, vol.80
, pp. 93
-
-
Murin, L.I.1
Hallberg, T.2
Markevich, V.P.3
Lindström, J.L.4
-
19
-
-
1642420141
-
Density functional modelling of point defects in semi-conductors
-
Ph.D. Thesis, University of Exeter, U.K
-
C.P. Ewels, Density functional modelling of point defects in semi-conductors. Ph.D. Thesis, University of Exeter, U.K. (1997).
-
(1997)
-
-
Ewels, C.P.1
-
20
-
-
69349106228
-
Degradation of boron-doped Czochralski silicon solar cells
-
J. Adey, R. Jones, D.W. Palmer, P.R. Briddon, and S. Öberg: Degradation of boron-doped Czochralski silicon solar cells. Phys. Rev. Lett. 93, 055504 (2004).
-
(2004)
Phys. Rev. Lett.
, vol.93
, pp. 055504
-
-
Adey, J.1
Jones, R.2
Palmer, D.W.3
Briddon, P.R.4
Öberg, S.5
-
21
-
-
0035794735
-
Aggregation kinetics of thermal double donors in silicon
-
Y.J. Lee, J. von Boehm, M. Pesola, and R.M. Nieminen: Aggregation kinetics of thermal double donors in silicon. Phys. Rev. Lett. 86, 3060 (2001).
-
(2001)
Phys. Rev. Lett.
, vol.86
, pp. 3060
-
-
Lee, Y.J.1
von Boehm, J.2
Pesola, M.3
Nieminen, R.M.4
-
22
-
-
0033365078
-
Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application
-
S. Glunz, S. Rein, J. Knobloch, W. Wettling, and T. Abe: Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application. Prog. Photovolt. 7, 463 (1999).
-
(1999)
Prog. Photovolt.
, vol.7
, pp. 463
-
-
Glunz, S.1
Rein, S.2
Knobloch, J.3
Wettling, W.4
Abe, T.5
-
23
-
-
0040028982
-
Minority carrier lifetime degradation in boron-doped Czochralski silicon
-
S. Glunz, S. Rein, J. Lee, and W. Warta: Minority carrier lifetime degradation in boron-doped Czochralski silicon. J. Appl. Phys. 90, 2397 (2001).
-
(2001)
J. Appl. Phys.
, vol.90
, pp. 2397
-
-
Glunz, S.1
Rein, S.2
Lee, J.3
Warta, W.4
-
24
-
-
0005489432
-
Gallium-doped Czochralski grown silicon: A novel promising material for the PV industry
-
(James & James, London, U.K.)
-
A. Metz, T. Abe, and R. Hezel: Gallium-doped Czochralski grown silicon: A novel promising material for the PV industry. Proc. 16th European Photovolt. Solar Energy Conf. (James & James, London, U.K., 2000), p. 1189.
-
(2000)
Proc. 16th European Photovolt. Solar Energy Conf.
, pp. 1189
-
-
Metz, A.1
Abe, T.2
Hezel, R.3
-
25
-
-
1642420143
-
High efficiency PERT cells on a variety of single crystalline silicon substrates
-
(James & James, London, U.K.)
-
J. Zhao, A. Wang, and M. Green: High efficiency PERT cells on a variety of single crystalline silicon substrates, in Proc. 16th European Photovolt. Solar Energy Conf. (James & James, London, U.K., 2000), p. 1100.
-
(2000)
Proc. 16th European Photovolt. Solar Energy Conf.
, pp. 1100
-
-
Zhao, J.1
Wang, A.2
Green, M.3
-
26
-
-
0034267803
-
Performance degradation in CZ(B) cells and improved stability high efficiency PERT and PERL silicon cells on a variety of SEH MCZ(B), FZ(B) and CZ(Ga) substrates
-
J. Zhao, A. Wang, and M. Green: Performance degradation in CZ(B) cells and improved stability high efficiency PERT and PERL silicon cells on a variety of SEH MCZ(B), FZ(B) and CZ(Ga) substrates. Prog. Photovolt. 8, 549 (2000).
-
(2000)
Prog. Photovolt.
, vol.8
, pp. 549
-
-
Zhao, J.1
Wang, A.2
Green, M.3
-
27
-
-
0035202141
-
Degradation of carrier lifetime in Cz silicon solar cells
-
S. Glunz, S. Rein, W. Warta, J. Knobloch, and W. Wettling: Degradation of carrier lifetime in Cz silicon solar cells. Sol. Energy Mater. Sol. Cells 65, 219 (2001).
-
(2001)
Sol. Energy Mater. Sol. Cells
, vol.65
, pp. 219
-
-
Glunz, S.1
Rein, S.2
Warta, W.3
Knobloch, J.4
Wettling, W.5
-
28
-
-
0036948620
-
Effective reduction of the metastable defect concentration in boron-doped Czochralski silicon for solar cells
-
(IEEE, New York)
-
K. Bothe, J. Schmidt, and R. Hezel: Effective reduction of the metastable defect concentration in boron-doped Czochralski silicon for solar cells, in Proc. 29th IEEE Photovolt. Spec. Conf. (IEEE, New York, 2002), p. 194.
-
(2002)
Proc. 29th IEEE Photovolt. Spec. Conf.
, pp. 194
-
-
Bothe, K.1
Schmidt, J.2
Hezel, R.3
-
29
-
-
0013132562
-
Permanent reduction of excess-carrier-induced recombination centers in solar grade Czochralski silicon by a short yet effective anneal
-
(James & James, London, U.K.)
-
H. Nagel, A. Merkle, A. Metz, and R. Hezel: Permanent reduction of excess-carrier-induced recombination centers in solar grade Czochralski silicon by a short yet effective anneal, in Proc. 16th European Photovolt. Solar Energy Conf. (James & James, London, U.K., 2000), p. 1197.
-
(2000)
Proc. 16th European Photovolt. Solar Energy Conf.
, pp. 1197
-
-
Nagel, H.1
Merkle, A.2
Metz, A.3
Hezel, R.4
-
30
-
-
0035507264
-
Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing
-
J. Lee, S. Peters, S. Rein, and S. Glunz: Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing. Prog. Photovolt. 9, 417 (2001).
-
(2001)
Prog. Photovolt.
, vol.9
, pp. 417
-
-
Lee, J.1
Peters, S.2
Rein, S.3
Glunz, S.4
-
31
-
-
0000698291
-
Progress in understanding and reducing the light degradation of Cz silicon solar cells
-
(James & James, London, U.K.)
-
J. Schmidt and A. Cuevas: Progress in understanding and reducing the light degradation of Cz silicon solar cells, in Proc. 16th European Photovolt. Solar Energy Conf. (James & James, London, U.K., 2000) p. 1193.
-
(2000)
Proc. 16th European Photovolt. Solar Energy Conf.
, pp. 1193
-
-
Schmidt, J.1
Cuevas, A.2
-
32
-
-
0033335124
-
Thin monocrystalline silicon solar cells
-
K. Münzer, K. Holdermann, R. Schlosser, and S. Sterk: Thin monocrystalline silicon solar cells. IEEE Trans. Electron Dev. 46, 2055 (1999).
-
(1999)
IEEE Trans. Electron Dev.
, vol.46
, pp. 2055
-
-
Münzer, K.1
Holdermann, K.2
Schlosser, R.3
Sterk, S.4
-
33
-
-
1642420142
-
High-efficiency cell structures for medium-quality silicon
-
(WIP-ETA, Munich, Germany)
-
S. Glunz, J. Dicker, J. Lee, R. Preu, S. Rein, E. Schneiderlöchner, J. Sölter, W. Warta, and G. Willeke: High-efficiency cell structures for medium-quality silicon, in Proc. 17th European Photovolt. Solar Energy Conf. (WIP-ETA, Munich, Germany, 2001), p. 1287.
-
(2001)
Proc. 17th European Photovolt. Solar Energy Conf.
, pp. 1287
-
-
Glunz, S.1
Dicker, J.2
Lee, J.3
Preu, R.4
Rein, S.5
Schneiderlöchner, E.6
Sölter, J.7
Warta, W.8
Willeke, G.9
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