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Volumn 13, Issue 4, 2005, Pages 325-331

Effect of dissociation of iron-boron Pairs in crystalline silicon on solar cell properties

Author keywords

Defects; Recombination; Silicon; Solar cells

Indexed keywords

BORON; CONTAMINATION; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DISSOCIATION; ELECTRIC POTENTIAL; IRON COMPOUNDS; LIGHTING; NEUTRON ACTIVATION ANALYSIS; SILICON;

EID: 20444413455     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.594     Document Type: Article
Times cited : (43)

References (12)
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    • Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping
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    • Macdonald, D.H.1    Geerligs, L.J.2    Azzizi, A.3
  • 6
    • 21544463903 scopus 로고
    • Electronically controlled reactions of interstitial iron in silicon
    • Kimerling LC, Benton JL. Electronically controlled reactions of interstitial iron in silicon. Physica B 1983; 116: 297-300.
    • (1983) Physica B , vol.116 , pp. 297-300
    • Kimerling, L.C.1    Benton, J.L.2
  • 7
    • 0035875614 scopus 로고    scopus 로고
    • Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
    • Macdonald D, Cuevas A, Wong-Leung J. Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements. Journal of Applied Physics 2001; 89: 7932-7939.
    • (2001) Journal of Applied Physics , vol.89 , pp. 7932-7939
    • Macdonald, D.1    Cuevas, A.2    Wong-Leung, J.3
  • 8
    • 33748621800 scopus 로고
    • Statistics of the recombinations of holes and electrons
    • Shockley W, Read WT. Statistics of the recombinations of holes and electrons. Physical Review 1952; 87: 835-842.
    • (1952) Physical Review , vol.87 , pp. 835-842
    • Shockley, W.1    Read, W.T.2
  • 9
    • 36149004075 scopus 로고
    • Electron-hole recombination in germanium
    • Hall RN. Electron-hole recombination in germanium. Physical Review 1952; 87: 387.
    • (1952) Physical Review , vol.87 , pp. 387
    • Hall, R.N.1
  • 10
    • 0034228219 scopus 로고    scopus 로고
    • Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes
    • Macdonald D, Cuevas A. Reduced fill factors in multicrystalline silicon solar cells due to injection-level dependent bulk recombination lifetimes. Progress in Photovoltaics: Research and Applications 2000; 8: 363-375.
    • (2000) Progress in Photovoltaics: Research and Applications , vol.8 , pp. 363-375
    • Macdonald, D.1    Cuevas, A.2
  • 11
    • 0035389734 scopus 로고    scopus 로고
    • Impact of light-induced recombination centres on the current-voltage characteristic of Czochralski silicon solar cells
    • Schmidt J, Cuevas A, Rein S, Glunz SW. Impact of light-induced recombination centres on the current-voltage characteristic of Czochralski silicon solar cells. Progress in Photovoltaics: Research and Applications 2001; 9: 249-255.
    • (2001) Progress in Photovoltaics: Research and Applications , vol.9 , pp. 249-255
    • Schmidt, J.1    Cuevas, A.2    Rein, S.3    Glunz, S.W.4
  • 12


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.