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Volumn 9, Issue 6, 2001, Pages 417-424

Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH FROM MELT; DEGRADATION; RAPID THERMAL ANNEALING; SILICON WAFERS; SOLAR CELLS; TEMPERATURE MEASUREMENT;

EID: 0035507264     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.394     Document Type: Article
Times cited : (18)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.