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Volumn 9, Issue 6, 2001, Pages 417-424
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Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing
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Author keywords
[No Author keywords available]
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Indexed keywords
CHARGE CARRIERS;
CRYSTAL GROWTH FROM MELT;
DEGRADATION;
RAPID THERMAL ANNEALING;
SILICON WAFERS;
SOLAR CELLS;
TEMPERATURE MEASUREMENT;
LIGHT INDUCED DEGRADATION;
METASTABLE DEFECT;
SEMICONDUCTING SILICON;
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EID: 0035507264
PISSN: 10627995
EISSN: None
Source Type: Journal
DOI: 10.1002/pip.394 Document Type: Article |
Times cited : (18)
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References (19)
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