Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes

Applied Surface Science

Volumn 135, Issue 1-4, 1998, Pages 350-356

  Nuhoǧlu, Çiǧdem ^a   Ayyíldíz, Enise ^a   Saǧlam, Mustafa ^a   Türüt, Abdülmecit ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

MIS; Ni n LEC GaAs; Schottky diode

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE EFFECTS; NICKEL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR METAL BOUNDARIES; THERMODYNAMIC STABILITY;

CHARGE DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0032475322     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0169-4332(98)00311-0     Document Type: Article

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