On the temperature dependence of the barrier height and the ideality factor in high voltage Ni-nGaAs Schottky diodes

Solid-State Electronics

Volumn 39, Issue 10, 1996, Pages 1457-1462

  Nathan, M ^a   Shoshani, Z ^a   Ashkinazi, G ^b   Meyler, B ^b   Zolotarevski, O ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b GAD Semiconductors   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CRYSTALLOGRAPHY; CURRENT VOLTAGE CHARACTERISTICS; NICKEL; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

IDEALITY FACTORS; INHOMOGENEOUS BARRIERS; SCHOTTKY BARRIER HEIGHTS;

SCHOTTKY BARRIER DIODES;

EID: 0030268830     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00060-3     Document Type: Review

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