Surface properties of chalcogen passivated GaAs(1 0 0)

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 850-855

  Kampen, T U ^a   Zahn, D R T ^a   Braun, W ^b   Gonzalez C ^c   Benito, I ^c   Ortega, J ^c   Jurczyszyn, L ^c   Blanco, J M ^c   Perez R ^c   Flores, F ^c  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

Density functional theory; GaAs; Passivation; Photoemission spectroscopy; Surfaces

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; CRYSTAL ATOMIC STRUCTURE; EVAPORATION; LOW ENERGY ELECTRON DIFFRACTION; PASSIVATION; PHOTOEMISSION; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SELENIUM; SEMICONDUCTOR LASERS; SURFACE STRUCTURE;

PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038209617     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00364-7     Document Type: Conference Paper

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