The influence of a selenium interlayer on the In/GaAs(100) interface formation

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 585-589

  Hohenecker, St ^a   Drews, D ^a   Lubbe M ^a   Zahn, D R T ^a   Braun, W ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Chalcogen modification; GaAs(100); Schottky barrier formation

Indexed keywords

BAND STRUCTURE; DEPOSITION; FERMI LEVEL; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING SELENIUM; SEMICONDUCTOR DOPING; SURFACE TREATMENT;

CHALCOGENS; SCHOTTKY BARRIERS; SYNCHROTRON PHOTOELECTRON EMISSION SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 4243902178     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00573-4     Document Type: Article

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