Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

Materials Science and Engineering: B

Volumn 128, Issue 1-3, 2006, Pages 37-43

  Hu, C Y ^a   Qin, Z X ^a   Feng, Z X ^a   Chen, Z Z ^a   Ding, Z B ^a   Yang, Z J ^a   Yu, T J ^a   Hu, X D ^a   Yao, S D ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

GaN; Ohmic contact; Rutherford backscattering spectroscopy (RBS); Synchrotron X ray diffraction (XRD); Transmission line method (TLM)

Indexed keywords

DIFFUSION; EPITAXIAL GROWTH; OXIDATION; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION ANALYSIS;

OHMIC CONTACT; SYNCHROTRON X-RAY DIFFRACTION (XRD); TRANSMISSION LINE METHOD (TLM);

GALLIUM NITRIDE;

EID: 33344465615     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.11.004     Document Type: Article

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