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Volumn 289, Issue 1, 2006, Pages 37-43

Effect of template layer on formation of flat-surface β-FeSi 2 epitaxial films on (1 1 1) Si by metal-organic chemical vapor deposition

Author keywords

A3. Metal organic chemical vapor epitaxy; B1. Semiconducting silicon compounds

Indexed keywords

EPITAXIAL GROWTH; GRAIN GROWTH; IRON COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SURFACE ROUGHNESS; THIN FILMS;

FLAT-SURFACE FILMS; METAL-ORGANIC CHEMICAL VAPOR EPITAXY; NUCLEAR DENSITY; TEMPLATE LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33244483871 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.10.111 Document Type: Article

Times cited : (9)

References (14)

1
- 0030616229
- D. Leong, M. Harry, K.J. Reeson, and K.P. Homewood Nature 387 1997 686
- (1997) Nature , vol.387 , pp. 686
- Leong, D.¹ Harry, M.² Reeson, K.J.³ Homewood, K.P.⁴

2
- 0000451959
- J.E. Mahan, K.M. Geib, G.Y. Robinson, R.G. Long, Y. Xinghua, G. Bai, M.-A. Nicolet, and M. Nathan Appl. Phys. Lett. 56 1990 2126
- (1990) Appl. Phys. Lett. , vol.56 , pp. 2126
- Mahan, J.E.¹ Geib, K.M.² Robinson, G.Y.³ Long, R.G.⁴ Xinghua, Y.⁵ Bai, G.⁶ Nicolet, M.-A.⁷ Nathan, M.⁸

3
- 36549099283
- N. Cherief, C.D. Anterroches, R.C. Cinti, T.A. Nguyen Tan, and J. Derrien Appl. Phys. Lett. 55 1989 1671
- (1989) Appl. Phys. Lett. , vol.55 , pp. 1671
- Cherief, N.¹ Anterroches, C.D.² Cinti, R.C.³ Nguyen Tan, T.A.⁴ Derrien, J.⁵

4
- 0031219815
- T. Suemasu, M. Tanaka, T. Fujii, S. Hashimoto, Y. Kumagai, and F. Hasegawa Jpn. J. Appl. Phys. 36 1997 L1225
- (1997) Jpn. J. Appl. Phys. , vol.36
- Suemasu, T.¹ Tanaka, M.² Fujii, T.³ Hashimoto, S.⁴ Kumagai, Y.⁵ Hasegawa, F.⁶

5
- 3643130905
- D.J. Eaglemann, and M. Cerullo Phys. Rev. Lett. 64 1990 1943
- (1990) Phys. Rev. Lett. , vol.64 , pp. 1943
- Eaglemann, D.J.¹ Cerullo, M.²

6
- 3042776999
- T. Suemasu, and F. Hasegawa J. Jpn. Assoc. Cryst. Growth 25 1998 46
- (1998) J. Jpn. Assoc. Cryst. Growth , vol.25 , pp. 46
- Suemasu, T.¹ Hasegawa, F.²

7
- 0033172251
- T. Suemasu, N. Hiroi, T. Fujii, K. Takakura, and F. Hasegawa Jpn. J. Appl. Phys. 38 1999 L878
- (1999) Jpn. J. Appl. Phys. , vol.38
- Suemasu, T.¹ Hiroi, N.² Fujii, T.³ Takakura, K.⁴ Hasegawa, F.⁵

8
- 3042788097
- K. Akiyama, T. Kimura, T. Suemasu, F. Hasegawa, Y. Maeda, and H. Funakubo Jpn. J. Appl. Phys. 43 2004 L551
- (2004) Jpn. J. Appl. Phys. , vol.43
- Akiyama, K.¹ Kimura, T.² Suemasu, T.³ Hasegawa, F.⁴ Maeda, Y.⁵ Funakubo, H.⁶

9
- 0036869193
- S. Chu, T. Hirohada, and H. Kan Jpn. J. Appl. Phys. 41 2001 L299
- (2001) Jpn. J. Appl. Phys. , vol.41
- Chu, S.¹ Hirohada, T.² Kan, H.³

10
- 4444257324
- T. Suemasu, M. Tatauji, C. Li, Y. Ozawa, M. Ichida, and F. Hasegawa Jpn. J. Appl. Phys. 43 2004 L930
- (2004) Jpn. J. Appl. Phys. , vol.43
- Suemasu, T.¹ Tatauji, M.² Li, C.³ Ozawa, Y.⁴ Ichida, M.⁵ Hasegawa, F.⁶

11
- 2342592128
- Z. Liu, Y. Suzuki, M. Osamura, T. Oostuka, T. Mise, R. Kuroda, H. Tanoue, Y. Makita, S. Wang, Y. Fukuzawa, N. Otogawa, and Y. Nakayama J. Appl. Phys. 95 2004 4019
- (2004) J. Appl. Phys. , vol.95 , pp. 4019
- Liu, Z.¹ Suzuki, Y.² Osamura, M.³ Oostuka, T.⁴ Mise, T.⁵ Kuroda, R.⁶ Tanoue, H.⁷ Makita, Y.⁸ Wang, S.⁹ Fukuzawa, Y.¹⁰ Otogawa, N.¹¹ Nakayama, Y.¹²

12
- 0035329154
- K. Akiyama, S. Ohya, H. Takano, N. Kieda, and H. Funakubo Jpn. J. Appl. Phys. 40 2001 L460
- (2001) Jpn. J. Appl. Phys. , vol.40
- Akiyama, K.¹ Ohya, S.² Takano, H.³ Kieda, N.⁴ Funakubo, H.⁵

13
- 0003996302
- Springer Berlin, Heidelberg, New York
- V. Borisenko Semiconducting Silicides 2000 Springer Berlin, Heidelberg, New York p. 50
- (2000) Semiconducting Silicides
- Borisenko, V.¹

14
- 0031164248
- M. Tanaka, Y. Kumagai, T. Suemasu, and F. Hasegawa Jpn. J. Appl. Phys. 36 1997 3620
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 3620
- Tanaka, M.¹ Kumagai, Y.² Suemasu, T.³ Hasegawa, F.⁴

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