Growth of epitaxial β-FeSi2 thin film on Si(001) by metal-organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 4 B, 2004, Pages

  Akiyama, Kensuke ^a,b   Kimura, Takeshi ^b   Suemasu, Takashi ^c   Hasegawa, Fumio ^c   Maeda, Yoshihito ^d   Funakubo, Hiroshi ^b  

^a KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

MOCVD; Photoluminescence; Thin film; FeSi2

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; THIN FILMS;

DIFFRACTION PEAK; FLAT SURFACES; POST-ANNEALING; Β-FESI2;

IRON COMPOUNDS;

EID: 3042788097     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l551     Document Type: Article

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