Evaluating TM1019.6 ELDRS screening methods using gated lateral PNP transistors

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2609-2615

  Nowlin, R N ^a,b   Pease, R L ^a,c   Platteter, D G ^a,d   Dunham, G W ^a,d   Seiler, J E ^a,d  

^a IEEE   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c RLP Research   (United States)

^d NAVSEA Crane   (United States)

Author keywords

Bipolar transistors; Enhanced low dose rate sensitivity (ELDRS); Hardness assurance; Total ionizing dose

Indexed keywords

ENHANCED LOW-DOSE-RATE SENSITIVITY (ELDRS); HARDNESS ASSURANCE; NPN TRANSISTORS; TOTAL IONIZING DOSE;

BUILT-IN SELF TEST; DOSIMETRY; MACHINE DESIGN; MANUFACTURE; SCREENING;

BIPOLAR TRANSISTORS;

EID: 33144470034     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860710     Document Type: Conference Paper

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