Assessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3723-3729

  Minson, E ^a   Sanchez, I ^a   Barnaby, H J ^a   Pease, R L ^b   Platteter, D G ^c   Dunnam, G ^c  

^a University of Arizona   (United States)

^b RLP Research   (United States)

^c NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

Bipolar transistor; Diodes; Dose rate; ELDRS; Gate sweep; Ionizing radiation; Radiation effects

Indexed keywords

BIPOLAR TECHNOLOGIES; ENHANCED LOW DOSE RATE SENSITIVITY (ELDRS); GATE SWEEP; GATED DIODES;

BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; DEFECTS; DIODES; ELECTRON TRAPS; IONIZING RADIATION; IRRADIATION; OXIDES; RADIATION EFFECTS;

DOSIMETRY;

EID: 11044221143     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839264     Document Type: Conference Paper

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