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Volumn PART B, Issue , 2005, Pages 1413-1420

Thermal characterization of pulse-activated microelectronic devices by thermoreflectance-based surface temperature scanning

Author keywords

[No Author keywords available]

Indexed keywords

DATA ACQUISITION; REFLECTION; SILICON; SURFACE CHEMISTRY; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

EID: 32844463053     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/ipack2005-73196     Document Type: Conference Paper
Times cited : (4)

References (16)
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  • 2
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    • Tessier, G.1    Hole, S.2    Fournier, D.3
  • 9
    • 0000922395 scopus 로고
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  • 11
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    • (1967) Phys Review Letters , vol.18 , pp. 445-448
    • Scouler, W.J.1
  • 12
    • 0042207180 scopus 로고    scopus 로고
    • Temperature dependence of the reflectivity of silicon with surface oxides at wavelengths of 633 nm and 1047 nm
    • J. Heller, J.W. Bartha, C. C. Poon, and A. C. Tam, "Temperature dependence of the reflectivity of silicon with surface oxides at wavelengths of 633 nm and 1047 nm", Applied Physics Letters, Vol. 75(1), pp. 43-45, 1999.
    • (1999) Applied Physics Letters , vol.75 , Issue.1 , pp. 43-45
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  • 13
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    • Laser beam thermography of circuits in the particular case of passivated semiconductors
    • V. Quintard, G. Deboy, S. Dilhaire, D. Lewis, T. Phan, W. Claeys, "Laser Beam Thermography of Circuits in the Particular Case of Passivated Semiconductors," Microelectronic Engineering, Vol. 31, pp. 291-298, 1996.
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  • 14
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.