Laser beam thermography of circuits in the particular case of passivated semiconductors

Microelectronic Engineering

Volumn 31, Issue 1-4, 1996, Pages 291-298

  Quintard, V ^a   Deboy, G ^c   Dilhaire, S ^a   Lewis, D ^a   Phan, T ^a,b  

^a UNIVERSITÉ DE BORDEAUX   (France)

^b UNIVERSITÉ BORDEAUX 1   (France)

^c SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER CONTROL; LASER APPLICATIONS; MATHEMATICAL MODELS; OXIDES; PROBES; REFLECTOMETERS; SEMICONDUCTING SILICON; SURFACES; THERMOGRAPHY (TEMPERATURE MEASUREMENT); VISUALIZATION;

LASER PROBE; OXIDE THICKNESS; PASSIVATION LAYER; TEMPERATURE MAPPING;

INTEGRATED CIRCUIT LAYOUT;

EID: 0030084630     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00351-7     Document Type: Article

References (5)

1. Thermoreflectance Optical Test Probe for the Measurement of Current Induced Temperature Changes in Microelectronic Components. W. Claeys, S.Dilhaire, V. Quintard, and Y.Danto Quality and Reliability Engineering International, Vol. 9, 303-308 (1993)
2. Laser probing of thermal behaviour of electronic components and its application in quality and reliability testing. W. Claeys, S. Dilhaire and V. Quintard. Microelectronic Engineering, 24, 1994, p. 411-420.
3. Design and operation of an automated, high-temperature ellipsometer. Y. J. van der Meulen and N. C. Hien. Journal of optical society of America, Vol. 64, n°6, 1974, pp 804-811.
4. Non intrusive wafer temperature measurement using in situ ellipsometry. G. M. W. Kroesen, G. S. Oehrlein and T. D. Bestwick. J. Appl. Phys., Vol. 69, n°5, 1991, pp 3390-3392.
5. Optical absorption of silicon between 1.6 and 4.7 eV 'at elevated temperatures. G. E. Jellison, Jr. and F. A. Modine. J. Appl. Phys., Vol. 41, n°2, 1982, pp 180-182.