Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

Chinese Physics

Volumn 15, Issue 1, 2006, Pages 213-218

  Lei, Qing Song ^a   Wu, Zhi Meng ^a   Geng, Xin Hua ^b   Zhao, Ying ^b   Sun, Jian ^b   Xi, Jian Ping ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b NANKAI UNIVERSITY   (China)

Author keywords

Boron doped c Si:H films; Carrier concentration; Crystallinity; Hall mobility; VHF PECVD

Indexed keywords

BORON; CARRIER CONCENTRATION; DOPING (ADDITIVES); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TEMPERATURE DISTRIBUTION; THIN FILMS;

BORON-DOPED ΜC-SI:H FILMS; CRYSTALLINITY; HALL MOBILITY; VHF PECVD;

SILICON;

EID: 32644461421     PISSN: 10091963     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-1963/15/1/035     Document Type: Article

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