Development of highly conducting p-type μc-Si:H films from minor diborane doping in highly hydrogenated SiH4 plasma

Materials Letters

Volumn 58, Issue 6, 2004, Pages 980-985

  Das, Debajyoti ^a   Jana, Madhusudan ^a,b  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b Tamralipta Mahavidyalaya   (India)

Author keywords

Boron doping; Chemical vapour deposition; Hydrogen dilution; Microcrystalline Si:H; Semiconductor; Thin films

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTALLIZATION; ELECTRON DIFFRACTION; GLASS; GRAIN SIZE AND SHAPE; HYDROGEN BONDS; HYDROGENATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON SOLAR CELLS; SILICON WAFERS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

BORON DOPING; HYDROGEN DILUTION; THERMAL EVAPORATION;

THIN FILMS;

EID: 0346970830     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2003.07.045     Document Type: Article

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