Effect of hydrogen dilution on the optical properties of hydrogenated amorphous silicon prepared by plasma deposition

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 79, Issue 3, 1999, Pages 387-405

  Yamaguchi, Masaaki ^a   Morigaki, Kazuo ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b HIROSHIMA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPOSITION EFFECTS; ENERGY GAP; FILM GROWTH; HYDROGEN; HYDROGEN BONDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SILANES;

HYDROGENATED AMORPHOUS SILICON; OPTICAL GAP; URBACH ENERGY;

SEMICONDUCTING FILMS;

EID: 0033098778     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642819908206415     Document Type: Article

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