Microcrystalline silicon growth in the presence of dopants: Effect of high growth temperatures

Journal of Non-Crystalline Solids

Volumn 338-340, Issue 1 SPEC. ISS., 2004, Pages 110-114

  Gordijn, A ^a   Rath, J K ^a   Schropp, R E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC POTENTIAL; ETCHING; NUCLEATION; SILICON; THERMAL EFFECTS; THICKNESS MEASUREMENT;

DOPANTS; ETCHING RATE; GROWTH RATE; TRANSPARENT CONDUCTIVE OXIDE (TCO);

CRYSTAL GROWTH;

EID: 2942587058     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2004.02.032     Document Type: Conference Paper

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