Inverse-Narrow-Width Effect of deep sub-micrometer MOSFETs with LOCOS isolation

Solid-State Electronics

Volumn 41, Issue 12, 1997, Pages 1885-1889

  Fung, Samuel K H ^a   Chan, Mansun ^a   Ko, Ping K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

INVERSE NARROW WIDTH EFFECT (INWE); THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0031367227     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00166-4     Document Type: Article

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