CMP of hard disk substrate using a colloidal SiO2 slurry: Preliminary experimental investigation

Wear

Volumn 257, Issue 5-6, 2004, Pages 461-470

  Lei, Hong ^a   Luo, Jianbin ^b  

^a SHANGHAI UNIVERSITY   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

Chemical mechanical polishing (CMP); Colloidal SiO2 slurry; Hard disk substrate; Planarization

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COLLOIDS; PH; SILICON COMPOUNDS; SLURRIES; SUBSTRATES; SURFACE REACTIONS; SURFACE ROUGHNESS; WEAR OF MATERIALS;

CHEMICAL-MECHANICAL POLISHING; GLOBAL PLANARIZATION TECHNOLOGY; SURFACE WAVINESS;

CHEMICAL POLISHING;

DISK DRIVE;

EID: 3242747465     PISSN: 00431648     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.wear.2004.01.017     Document Type: Article

References (45)

1. Han H.Ryan F.Mcclure M.Ultra-thin tetrahedral amorphous carbon film as solider overcoat for high areal density magnetic recording Surf. Coat. Technol. 121 1999 579-584
2. A.K. Menon, Critical requirements for 100Gb/in2 head media interface, in: ASME Proceedings of the Symposium on Interface Technology towards 100Gbit/in2, Orlando, FL, 1999, pp. 1-9.
3. Bhushan B.Chemical, mechanical and tribological characterization of ultra-thin and hard amorphous carbon coatings as thin as 3.5 nm, recent development Diam. Relat. Mater. 8 1999 1985-2015
4. Z. Zhao, B. Bhushan, Studies of fly stiction, in: Proceedings of the Institution of Mechanical Engineers, Part J, J. Eng. Tribol. 215 (2001) 63-76.
5. Xu J.Tsuchiyama R.Ultra-low-flying-height design form the viewpoint of contact vibration Tribol. Int. 36 2003 459-466
6. 2 hard disks Tribol. Int. 36 2003 291-296
7. Li Y.Bhushan B.Wear and friction studies of contact recording interface with microfabricated heads Wear 202 1996 60-67
8. Bhushan B.Gupta B.K.Azarian M.H. Nanoindentation, microscratch, friction and wear studies of coating for contact recording applications Wear 181-183 1995 743-758
9. B. Bhushan, Tribology and Mechanics of Magnetic Storage Devices, 2nd ed., Springer-Verlag, New York, 1996.
10. Poon C.Y.Bhhushan B.Surface roughness analysis of glass-ceramic substrates and finished magnetic disks, and Ni-P coated Al-Mg and glass substrates Wear 190 1995 89-109
11. IDEMA (The International Disk Drive Equipment and Materials Association), Disk Drive Technology, IDEMA, 2000, pp. 7-9.
12. Horn M.Antireflection layers and planarization for microlithography Solid State Technol. 31 1991 57-62
13. Ali I.Chemical-mechanical polishing of interlayer dielectric: a review Solid State Technol. 34 1994 63-70
14. Rahul J.Janos F.Huang C.K.Chemical-mechanical polishing: process manufacturability Solid State Technol. 34 1994 71-75
15. A.N. Saxena, D. Pramanik, Planarization techniques for multilevel metallization, Solid State Technol. 29 (1986) 95-100.
16. Farid M.Masood H.Manufacturability of the CMP process Thin Solid Films 270 1995 612-615
17. Kao Corporation (TOKYO, JP), Abrasives composition, substrate and process for producing the same, and magnetic recording medium and process for producing the same, US Patent 5,868,604 (1999).
18. Cobot Corporation (BOSTON, MA), Composition and method for polishing rigid disks, US Patent 6,015,506 (2000).
19. Kao Corporation (TOKYO, JP), Polishing composition, US Patent 6,454,820 (2002).
20. Cobot Microelectronics Corporation (Aurora, IL), Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system, US Patent 6,468,137 (2002).
21. Cobot Microelectronics Corporation (Aurora, IL), Method of polishing a memory or rigid disk with an ammonia- and/or halide-containing composition, US Patent 6,461,227 (2002).
22. Michael C.P.Duncan A.G.The importance of particle size to the performance of abrasive particles in the CMP process J. Electron. Mater. 25 1996 1612-1616
23. Xie Y.Bhushan B.Effects of particle size, polishing pad and contact pressure in free abrasive polishing Wear 200 1996 281-295
24. Bielmann M.Mahajan U.Singh R.K.Effect of particle size during tungsten chemical mechanical polishing Electrochem. Solid-State Lett. 2 1999 401-403
25. 2 chemical mechanical polishing Tribol. Trans. 45 2002 230-232
26. Liu Y.Zhang K.Wang F. et al.Investigation on the final polishing slurry and technique of silicon substrate in ULSI Microelectron. Eng. 66 2003 438-444
27. Basim G.B.Adler J.J.Mahajan U. et al.Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects J. Electrochem. Soc. 147 2000 3523-3528
28. 2 chemical mechanical polishing Lubric. Eng. 58 2002 35-41
29. Stein D.J.Hetherington D.L.Cecchi J.L.Investigation of the kinetics of tungsten chemical polishing in potassium iodate-based slurries. I. Role of alumina and potassium iodate J. Electrochem. Soc. 146 1999 376-381
30. 2 slurry Int. J. Nonlinear Sci. Numer. Simulat. 3 2002 455-459
31. Luo J.F.Dornfeld D.A.Material removal mechanism in chemical mechanical polishing: theory and modeling IEEE Trans. Semicond. Manufac. 2 2001 112-133
32. Cho C.H.Park S.S.Ahn Y.Three-dimensional wafer scale hydrodynamic modeling for chemical mechanical polishing Thin Solid Films 389 2001 254-260
33. Park S.S.Cho C.H.Ahn Y.Hydrodynamic analysis of chemical mechanical polishing process Tribol. Int. 33 2000 723-730
34. Larsen-Basse J.Liang H.Probable role of abrasion in chemomechanical polishing of tungsten Wear 233-235 1999 647-654
35. Liang H.Kaufman F.Sevilla R. et al.Wear phenomenon in chemical mechanical polishing Wear 211 1997 271-279
36. Grover G.S.Liang H.Ganeshkumar S. et al. Effect of slurry viscosity modification on oxide and tungsten CMP Wear 214 1998 10-13
37. Zhou C.H.Shan L.Hight J.R.Ng S.H. et al.Fluid pressure and its effects on chemical mechanical polishing Wear 253 2002 430-437
38. Zhao Y.W.Chang L.A micro-contact and wear model for chemical-mechanical polishing of silicon wafers Wear 252 2002 220-226
39. Zhao Y.W.Chang L.Kim S.H.A mathematical model for chemical-mechanical polishing based on formation and removal of weakly bonded molecular species Wear 254 2003 332-339
40. Nanz G.Camilletti L.E.Modeling of chemical-mechanical polishing: a review IEEE Trans. Semicond. Manuf. 8 1995 382-389
41. Seok J.Sukam C.Kim A.T. et al.Multiscale material removal modeling of chemical mechanical polishing Wear 254 2003 307-320
42. Warnock J.A two-dimensional process model for chemomechanical polishing planarization J. Electrochem. Soc. 138 1991 2398-2402
43. Hsu J.Chiu S.Wang Y. et al.The removal selectivity of titanium and aluminum in chemical planarization J. Electrochem. Soc. 149 2002 204-208
44. J.M. Steigerward, S.P. Muraka, R.J. Gutmann, Chemical Mechanical Planarization of Microelectronic Materials, Wiley, New York, 1997.
45. Liang H.Xu G.H.Lubricating behavior in chemical-mechanical polishing of copper Scripta Materialia 46 2002 343-347