Influence of colloidal abrasive size on material removal rate and surface finish in SiO2 chemical mechanical polishing

Lubrication Engineering

Volumn 58, Issue 8, 2002, Pages 35-41

  Zhou, Chunhong ^a   Shan, Lei ^a   Hight, J Robert ^a   Danyluk, Steven ^a   Ng, S H ^a   Paszkowski, Andrew J ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Abrasive; Chemical mechanical polishing; Material removal rate; Surface finish

Indexed keywords

ABRASIVES; CHEMICAL MECHANICAL POLISHING; COLLOIDS; MATHEMATICAL MODELS; PARTICLE SIZE ANALYSIS; SILICON WAFERS; SINGLE CRYSTALS; SLURRIES;

COLLOIDAL ABRASIVE SIZE;

SILICA;

ABRASION; COLLOID; MICROELECTRONICS; POLISHING; SILICON DIOXIDE; SURFACE FINISH;

EID: 0036692809     PISSN: 00247154     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (18)

1. Investigation of pad deformation and conditioning during the CMP of silicon dioxide films
2. Effect of polishing pad material properties on chemical mechanical polishing (CMP) processes
3. Effect of particle size during tungsten chemical mechanical polishing
4. Chemical processes in glass polishing
5. CMP grows in sophistication
6. Contact of nominally flat rough surfaces
7. A kinematic analysis of CMP based on velocity model
8. Consumables for the chemical mechanical polishing (CMP) of dielectrics and conductors
9. Effect of slurry abrasive size on polish rate and surface quality of silicon dioxide films
10. Abrasive effects in oxide chemical mechanical polishing
11. CMP applications for sub-0.25 μm process technologies
12. The theory and design of plate glass polishing machines
13. Mechanical interactions and their effects on chemical mechanical polishing
14. Effects of film stress on the chemical mechanical polishing process
15. A comparative study on the roles of velocity in the material removal rate during chemical mechanical polishing
16. Effects of particle size, polishing pad and contact pressure in free abrasive polishing