Chemical Mechanical Polishing of Computer Hard Disk Substrate in Colloidal SiO2 Slurry

International Journal of Nonlinear Sciences and Numerical Simulation

Volumn 3, Issue 3-4, 2002, Pages 455-459

  Lei, Hong ^a   Luo, Jian Bin ^a   Pan, Guos Shun ^a   Ma, Jun Jie ^a   Gao, Feng ^a   Lu, Xin Chun ^a   Tu, Xif Fu ^b   Fang, Liang ^b   Yuen, Kwok H ^b   Si Ma, Neng ^b  

^a TSINGHUA UNIVERSITY   (China)

^b Shenzhen Kaifa Magnetic Recording C ^*  (China)

Author keywords

Chemical mechanical polishing (CMP); Colloidal SiO2; Hard disk substrate; Slurry

Indexed keywords

EID: 0347935991     PISSN: 15651339     EISSN: None     Source Type: Journal    
DOI: 10.1515/IJNSNS.2002.3.3-4.455     Document Type: Article

References (17)

1. Han, H., Ryan, F., Mcclure M., Ultra-thin tetrahedral amorphous carbon film as solider overcoat for high areal density magnetic recording, Surface and Coatings Technology, 121(1999)579-584.
2. 2, Orlando, Floride, 1999: 1-9.
3. Bhushan B., Chemical, mechanical and tribological characterization of ultra-thin and hard amorphous carbon coatings as thin as 3.5nm, recent development, Diam. And Relat. Mater., 8(1999)1985-2015.
4. IDEMA (the international Disk Drive Equipment and Materials Association). "Disk Drive Technology," IDEMA, 2000, 7-9.
5. Horn, M., Antireflection layers and planarization for microlithography, Solid State Technology, 31(1991)57-62.
6. Ali, I., et al., Chemical-mechanical polishing of interlayer dielectric: a review, Solid State Technology, 34(1994) 63-70.
7. Rahul, J., Janos F., Huang, C.K., et al. Chemical-mechanical polishing: Process manufacturability, Solid State Technology, 34(1994)71-75.
8. Rentln, P., Chemical-mechanical planarization: fundamental issues of interlevel dielectric applications, Meet. Solid State Sci. Technol. Subsection Proc., September 1992.
9. Farid, M., Masood, H., Manufacturability of the CMP process, Thin Solid Films, 270 (1995)612-615.
10. JP-A-10-204416
11. JP-B-64-436
12. JP-B-2-23589
13. JP-B-4-38788
14. Polishing slurry for the manufacture of hard disk of memory device, CN1312345 (2001), in Chinese.
15. Luo, J.F., Dornfeld D.A., Material removal mechanism in chemical mechanical polishing: theory and modeling, IEEE Transactions on Semiconductor Manufacturing,14(2001)112-133.
16. Levert, J.A., Mess, F.M., Salant, R.F., et al. Mechanism of chemical-mechanism of SiO2 dielectric on integrated circuits, Tribology Transactions, 41(1998)593-599.
17. Zhou, C.H., Shan, L., Hight, J.R., et al. Influence of colloidal abrasive size on material removal rate and surface finish in SiO2 chemical mechanical polishing, Tribology Transactions, 45(2002)232-241.