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Volumn 149, Issue 3, 2002, Pages

The removal selectivity of titanium and aluminum in chemical mechanical planarization

(7) Hsu, Jyh Wei a Chiu, Shao Yu b Wang, Ying Lang c Dai, Bau Tong d Tsai, Ming Shih d Feng, Ming Shiann b Shiha, Han C a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

d NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL MECHANICAL POLISHING; HYDROGEN INORGANIC COMPOUNDS; OXIDATION; PASSIVATION; PH; REMOVAL; SLURRIES; SPECTROSCOPIC ANALYSIS; SURFACE PROPERTIES; TITANIUM;

CHEMICAL MECHANICAL PLANARIZATION; DAMASCENE PROCESS; METAL OXIDE FORMATION; OXIDIZER CONCENTRATION; SURFACE PASSIVATION;

ELECTROCHEMISTRY;

EID: 0036503102 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1449954 Document Type: Article

Times cited : (9)

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